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Mini TOPLED(R)
LS M670, LO M670, LY M670 LG M670, LP M670
Besondere Merkmale
q q q q q q
Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8-mm-Filmgurt) Storimpulsfest nach DIN 40839
VPL06927
Features
q q q q q q
color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-11-12
LS M670, LO M670, LY M670 LG M670, LP M670
Typ
Emissionsfarbe Color of Emission
Type
Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear
Lichtstarke
Lichtstrom
Bestellnummer
Luminous Intensity IF = 10 mA IV (mcd) 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 2.5 ... 12.5 4.0 ... 8.0 6.3 ... 12.5 4.0 ... 32.0 1.0 ... 8.0 1.6 ... 3.2 2.5 ... 5.0 1.6 ... 12.5
Luminous Flux IF = 10 mA V (mlm) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 18 (typ.) 30 (typ.) 8 (typ.) 12 (typ.) -
Ordering Code
LS M670-HK LS M670-J LS M670-K LS M670-JM LO M670-HK LO M670-J LO M670-K LO M670-JM LY M670-HK LY M670-J LY M670-K LY M670-JM LG M670-HK LG M670-J LG M670-K LG M670-JM LP M670-FJ LP M670-G LP M670-H LP M670-GK
super-red
Q62703-Q3380 Q62703-Q3381 Q62703-Q3382 Q62703-Q3383 Q62703-Q3384 Q62703-Q3385 Q62703-Q3386 Q62703-Q3387 Q62703-Q3388 Q62703-Q3389 Q62703-Q3390 Q62703-Q3391 Q62703-Q3392 Q62703-Q3393 Q62703-Q3394 Q62703-Q3395 Q62703-Q3396 Q62703-Q3397 Q62703-Q3398 Q62703-Q3399
orange
colorless clear
yellow
colorless clear
green
colorless clear
pure green
colorless clear
Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.
Semiconductor Group
2
1998-11-12
LS M670, LO M670, LY M670 LG M670, LP M670
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung Reverse voltage Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2)
*) PC-board: FR4 1) vorlaufig/preliminary
Symbol Symbol
Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5
Einheit Unit C C C mA A
Top Tstg Tj IF IFM
VR Ptot Rth JA
5 80 4801)
V mW K/W
Semiconductor Group
3
1998-11-12
LS M670, LO M670, LY M670 LG M670, LP M670
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 (typ.) (max.) (typ.) (max.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) (typ.) Symbol Symbol LS LO 610 Werte Values LY 586 LG 565 LP 557 nm 635 Einheit Unit
peak
dom
628
605
590
570
560
nm
45
40
45
25
22
nm
2
120 2.0 2.6
120 2.0 2.6
120 2.0 2.6
120 2.0 2.6
120 2.0 2.6
Grad deg. V V
VF VF IR IR C0
0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A 12 8 10 15 15 pF
(typ.) (typ.)
tr tf
300 150
300 150
300 150
450 200
450 200
ns ns
Semiconductor Group
4
1998-11-12
LS M670, LO M670, LY M670 LG M670, LP M670
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve
100 % rel 80
OHL01698
V
60
red
pure-green green
orange
20
0 400
blue
450
500
550
yellow
40
600
super-red
650
hyper-red
nm
700
Abstrahlcharakteristik Irel = f () Radiation characteristic
40 30 20 10 0
OHL01660
1.0
50
0.8
0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0
Semiconductor Group
5
1998-11-12
LS M670, LO M670, LY M670 LG M670, LP M670
Durchlastrom IF = f (VF) Forward current TA = 25 C
10 2
OHL02145
Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C
10 1 V V (10 mA) 10 0
OHL02146
F mA
10 1 5
5
10 -1 5
pure-green 10 0 5 super-red orange/yellow green 1.4 1.8 2.2 2.6 3.0 V 3.4
10 -2 5
green red yellow super-red orange pure-green
-1
10 -1 1.0
10 -3 10
5 10
0
5
10
1
mA 10
2
VF
F
Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C
10 3
OHL01686
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
35
OHL00231
F
mA
tP D=
tP
T T
F
F mA 30
25 20
D = 0.005 0.01 0.02 0.05 0.1
10
2
0.2
15
5 0.5
10
DC
5
10 1 -5 10
10 -4
10 -3
10 -2
10 -1
10 0 s 10 1 tp
0
0
20
40
60
80 C 100 TA
Semiconductor Group
6
1998-11-12
LS M670, LO M670, LY M670 LG M670, LP M670
Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA
690
OHL02104
Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA
690
OHL02105
peak
nm 650 super-red 630 orange 610 590 570 550 yellow
dom
nm 650 630 610 590 570 550 super-red
orange yellow green pure-green 0 20 40 60 80 C 100
green pure-green 0 20 40 60 80 C 100
TA
TA
Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA
2.4
OHL02106
Relative Lichtstarke IV / IV(25 C ) = f (TA) Relative luminous intensity IF = 10 mA
2.0 V V (25 C) 1.6
OHL02150
VF
V 2.2
2.0 green super-red orange yellow
1.2
yellow green
1.8
0.8
pure-green
orange super-red pure-green
1.6
0.4
1.4
0
20
40
60
80 C 100
0.0
0
20
40
60
80 C 100
TA
TA
Semiconductor Group
7
1998-11-12

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